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Yangtze Memory Technology Co. (YMTC), a leading Chinese NAND flash manufacturer, is expected to begin full-scale shipments of high-stacking NAND from its state-of-the-art Wuhan Line 3 factory starting in the second half of this year, following the stabilization of its two existing production lines. It is also reported that securing major overseas clients, a task that had previously faced difficulties, is progressing smoothly. YMTC’s NAND production volume is projected to surpass that of SK Hynix and Micron, which are vying for third and fourth place in the industry, by the end of the year.
According to industry sources on the 2nd, YMTC plans to begin full-scale mass production of state-of-the-art NAND products at its Wuhan Line 3 in Hubei Province, China, which is set to start full-scale operations in the second half of this year. An official familiar with the local situation in China explained, “It is known that Wuhan Lines 1 and 2 are already approaching their maximum production capacity, and Line 3, the latest factory, is currently in the final stages of setting up key equipment for full-scale mass production.”
YMTC has expanded its presence in the global NAND market at a rapid pace over the past two years. The Wuhan Line 2, which began operations in 2024, is reported to have reached its maximum production capacity in just two years. The line is currently producing an average of 60,000 wafers per month based on wafer input, while Line 1, the largest facility, is mass-producing 100,000 wafers. Annual production volume also increased from 1.29 million in 2024 to 1.77 million last year, and is expected to approach 2 million this year.
Once the Wuhan Plant 3 begins full-scale operation, YMTC is expected to overtake SK Hynix and Micron in the global NAND market based on shipment volume and secure the third position. This effectively positions it as the manufacturer producing the most NAND, following Japan’s Kioxia (4.82 million units) and Samsung Electronics (4.68 million units). In particular, YMTC is continuously increasing the proportion of high-difficulty 200-layer products, in addition to legacy NAND, for sectors such as servers and mobile, and is reported to stabilize the yield of 300-layer products this year.
